參數(shù)資料
型號(hào): DA28F016SA-080
廠商: INTEL CORP
元件分類(lèi): DRAM
英文描述: 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述: 1M X 16 FLASH 12V PROM, 80 ns, PDSO56
封裝: 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56
文件頁(yè)數(shù): 27/63頁(yè)
文件大小: 635K
代理商: DA28F016SA-080
E
28F016SV FlashFile MEMORY
27
TEST POINTS
INPUT
OUTPUT
2.0
0.8
0.8
2.0
2.4
0.45
AC test inputs are driven at V
(2.4 VTTL) for a Logic
“1” and V
(0.45 VTTL) for a Logic “0.” Input timing begins at V
IH
(2.0 VTTL) and V
IL
(0.8 VTTL). Output timing ends at V
IH
and V
IL
. Input rise and fall times (10% to 90%) <10 ns.
0528_07
Figure 7. Transient Input/Output Reference Waveform for
V
CC
= 5V ± 10% (Standard Testing Configuration)
(1)
TEST POINTS
INPUT
OUTPUT
1.5
3.0
0.0
1.5
AC test inputs are driven at 3.0V for a Logic
“1” and 0.0V for a Logic “0.” Input timing begins, and output timing ends, at 1.5V.
Input rise and fall times (10% to 90%) <10 ns.
0528_08
Figure 8. Transient Input/Output Reference Waveform for V
= 3.3V ± 0.3V
and V
CC
= 5V ± 5% (High Speed Testing Configuration)
(2)
NOTES:
1.
Testing characteristics for 28F016SV-070 (Standard Testing Configuration) and 28F016SV-080.
2. Testing characteristics for 28F016SV-065/28F016SV-075 and 28F016SV-70 (High Speed Testing Configuration)/
28F016SV-120.
相關(guān)PDF資料
PDF描述
DA28F016SA-100 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
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