- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄378525 > DA28F016SA-080 (INTEL CORP) 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | DA28F016SA-080 |
| 廠(chǎng)商： | INTEL CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 12V PROM, 80 ns, PDSO56 |
| 封裝： | 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56 |
| 文件頁(yè)數(shù)： | 19/63頁(yè) |
| 文件大小： | 635K |
| 代理商： | DA28F016SA-080 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)
E
4.4 28F016SV
—Performance Enhancement Command Bus Definitions
28F016SV FlashFile MEMORY
19
Command
Mode
Notes
First Bus Cycle
Second Bus Cycle
Third Bus Cycle
Oper
Addr
Data
(13)
Oper
Addr
Data
(13)
Oper
Addr
Data
Read Extended
Status Register
1
Write
X
xx71H
Read
RA
GSRD
BSRD
Page Buffer Swap
7
Write
X
xx72H
Read Page Buffer
Write
X
xx75H
Read
PBA
PD
Single Load to Page
Buffer
Write
X
xx74H
Write
PBA
PD
Sequential Load to
Page Buffer
x8
4,6,10
Write
X
xxE0H
Write
X
BCL
Write
X
BCH
x16
4,5,6,10
Write
X
xxE0H
Write
X
WCL
Write
X
WCH
Page Buffer Write to
Flash
x8
3,4,9,10
Write
X
xx0CH
Write
A0
BC(L,H)
Write
PA
BC(H,L)
x16
4,5,10
Write
X
xx0CH
Write
X
WCL
Write
PA
WCH
Two-Byte Program
x8
3
Write
X
xxFBH
Write
A0
WD(L,H)
Write
PA
WD(H,L)
Lock Block/Confirm
Write
X
xx77H
Write
BA
xxD0H
Upload Status
Bits/Confirm
2
Write
X
xx97H
Write
X
xxD0H
Upload Device
Information/Confirm
11
Write
X
xx99H
Write
X
xxD0H
Erase All Unlocked
Blocks/Confirm
Write
X
xxA7H
Write
X
xxD0H
RY/BY# Enable to
Level-Mode
8
Write
X
xx96H
Write
X
xx01H
RY/BY#
Pulse-On-Write
8
Write
X
xx96H
Write
X
xx02H
RY/BY#
Pulse-On-Erase
8
Write
X
xx96H
Write
X
xx03H
RY/BY# Disable
8
Write
X
xx96H
Write
X
xx04H
RY/BY# Pulse-On-
Write/Erase
8
Write
X
xx96H
Write
X
xx05H
Sleep
12
Write
X
xxF0H
Abort
Write
X
xx80H
ADDRESS
BA = Block Address
PBA = Page Buffer Address
RA = Extended Register Address
PA = Program Address
X = Don’t Care
DATA
AD = Array Data
PD = Page Buffer Data
BSRD = BSR Data
GSRD = GSR Data
WC (L,H) = Word Count (Low, High)
BC (L,H) = Byte Count (Low, High)
WD (L,H) = Write Data (Low, High)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DA28F016SA-100 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-120 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-150 | 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016XS15 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F320J5-120 | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DA28F016SA100 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8/x16 Flash EEPROM |
| DA28F016SA-100 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-120 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA-150 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY |
| DA28F016SA70 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8/x16 Flash EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。