參數(shù)資料
型號: DA28F016SA-080
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述: 1M X 16 FLASH 12V PROM, 80 ns, PDSO56
封裝: 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56
文件頁數(shù): 26/63頁
文件大?。?/td> 635K
代理商: DA28F016SA-080
28F016SV FlashFile MEMORY
E
26
5.2 Capacitance
For a 3.3V ± 0.3V System:
Sym
Parameter
Notes
Typ
Max
Units
Test Conditions
C
IN
Capacitance Looking into an
Address/Control Pin
1
6
8
pF
T
A
= +25
°
C, f = 1.0 MHz
C
OUT
Capacitance Looking into an
Output Pin
1
8
12
pF
T
A
= +25
°
C, f = 1.0 MHz
C
LOAD
Load Capacitance Driven by
Outputs for Timing Specifications
1,2
50
pF
For 5V ± 0.5V, 5V ± 0.25V System:
Sym
Parameter
Notes
Typ
Max
Units
Test Conditions
C
IN
Capacitance Looking into an
Address/Control Pin
1
6
8
pF
T
A
= +25
°
C, f = 1.0 MHz
C
OUT
Capacitance Looking into an
Output Pin
1
8
12
pF
T
A
= +25
°
C, f = 1.0 MHz
C
LOAD
Load Capacitance Driven by
Outputs for Timing Specifications
1,2
100
pF
For V
CC
= 5V
±
0.5V
30
pF
For V
CC
= 5V
±
0.25V
NOTE:
1. Sampled, not 100% tested. Guaranteed by design.
2. To obtain iBIS models for the 28F016SV, please contact your local Intel/Distribution Sales Office.
相關(guān)PDF資料
PDF描述
DA28F016SA-100 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-120 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-150 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016XS15 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
DA28F320J5-120 StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DA28F016SA100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
DA28F016SA-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM