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參數(shù)資料
| 型號(hào)： | CYD36S18V18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | FullFlex Synchronous SDR Dual-Port SRAM(FullFlex同步SDR雙端口SRAM) |
| 中文描述： | FullFlex器件特別提款權(quán)同步雙端口SRAM（FullFlex器件同步雙端口SRAM的特別提款權(quán)） |
| 文件頁數(shù)： | 51/52頁 |
| 文件大?。?/td> | 774K |
| 代理商： | CYD36S18V18 |
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FullFlex
Document #: 38-06082 Rev. *F
Page 51 of 52
Document History Page
Document Title: FullFlex Synchronous SDR Dual-Port SRAM
Document Number: 38-06082
Issue
Date
Change
**
302411
See ECN
*A
334036
See ECN
REV.
ECN NO.
Orig. of
Description of Change
YDT
YDT
New data sheet
Corrected typo on page 1
Reproduced PDF file to fix formatting errors
Added statement about no echo clocks for flow-through mode
Updated electrical characteristics
Added note 16 and 17 (1.5V timing)
Added note 33 (timing for x18 devices)
Updated input edge rate (note 34)
Updated table 5 on deterministic access control logic
Added description of busy readback in deterministic access control section
Changed dummy write descriptions
Updated ZQ pins connection details
Updated note 24, B0 to BE0
Added power supply requirements to MRST and VC_SEL
Added note 4 (VIM disable)
Updated supply voltage to ground potential to 4.1V
Updated parameters on table 15
Updated and added parameters to table 16
Updated x72 pinout to SDR only pinout
Updated 484 PBGA pin diagram
Updated the pin definition of MRST
Updated the pin definition of VC_SEL
Updated READY description to include Wired OR note
Updated master reset to include wired OR note for READY
Updated minimum V
OH
value for the 1.8V LVCMOS configuration
Updated electrical characteristics to include I
OH
and I
OL
values
Updated electrical characteristics to include READY
Added I
IX3
Updated maximum input capacitance
Added Notes 33 and 34Removed Notes 15 and 17
Updated Pin Definitions for CQ0, CQ0
,
CQ1
,
and CQ1
Removed -100 Speed bin from Table.1 Selection Guide
Changed voltage name from V
DDQ
to V
DDIO
Changed voltage name from V
DD
to V
CORE
Moved the Mailbox Interrupt Timing Diagram to be the final timing diagram
Updated the Package Type for the CYD36S18V18 parts
Updated the Package Type for the CYD36S18V18 parts
Updated the Package Type for the CYD18S18V18 parts
Updated the Package Type for the CYD18S36V18 parts
Included the Package Diagram for the 256-Ball FBGA (19 x 19 mm) BW256
Included an OE Controlled Write for Flow-through Mode Switching Waveform
Included a Read with Echo Clock Switching Waveform
Updated Figure 5 and Figure 6
Updated Electrical Characteristics for READY V
OH
and READY V
Updated Electrical Characteristics for V
OH
and V
OL
for the -167 and -133 speeds
Included a Unit column for Table 5
Removed Switching Characteristic t
CA
from chart
Included t
OHZ
in Switching Waveform OE Controlled Write for Pipelined Mode
Included t
CKLZ2
in Waveform Read-to-Write-to-Read for Flow-through Mode
Updated AC Test Load and Waveforms
Included FullFlex36 SDR 484-ball BGA Pinout (Top View)
Included FullFlex18 SDR 484-ball BGA Pinout (Top View)
Included Timing Parameter t
CORDY
*B
395800
See ECN
SPN
*C
402238
SEE ECN
KGH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CYD36S36V18 | FullFlex Synchronous SDR Dual-Port SRAM(FullFlex同步SDR雙端口SRAM) |
| CYD18S72V | FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM(FLEx72 3.3V 64K/128K/256K x 72同步雙端口RAM) |
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| CYDC128B08-55AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B08 | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYD36S18V18-133BBXC | 制造商:Cypress Semiconductor 功能描述:FULLFLEX36 36M SYNC DUAL-PORT ?2M X 18, SDR? - Bulk |
| CYD36S18V18-167BGXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (2Mx18) 1.8v 167MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYD36S18V18-167BGXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (2Mx18) 1.8v 167MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYD36S18V18-200BGXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (2Mx18) 1.8v 200MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYD36S36V18-133BBXC | 功能描述:IC SRAM 36MBIT 133MHZ 256LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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