參數(shù)資料
型號： CYD04S36V
廠商： Cypress Semiconductor Corp.
英文描述： FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步雙端口RAM)
中文描述： FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步雙口RAM（FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步雙端口RAM）的
文件頁數(shù)： 12/28頁
文件大?。?/td> 608K
代理商： CYD04S36V
CYD01S36V
CYD02S36V/CYD04S36V
CYD09S36V/CYD18S36V
Document #: 38-06076 Rev. *E
Page 12 of 28
Maximum Ratings
[25]
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential...............–0.5V to +4.6V
DC Voltage Applied to
Outputs in High-Z State...........................–0.5V to V
DD
+0.5V
DC Input Voltage...............................–0.5V to V
DD
+ 0.5V
[26]
Electrical Characteristics
Over the Operating Range
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage...........................................> 2000V
(JEDEC JESD22-A114-2000B)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C 3.3V±165 mV 1.8V±100 mV
–40°C to +85°C 3.3V±165 mV 1.8V±100 mV
V
DDIO/VTTL
V
CORE
[13]
Parameter
V
OH
V
OL
V
IH
V
IL
I
OZ
I
IX1
I
IX2
I
CC
Description
-167
-133
Typ.
-100
Typ. Max.
Unit
V
V
V
V
μ
A
μ
A
mA
mA
Min. Typ. Max. Min.
2.4
Max. Min.
Output HIGH Voltage (V
DD
= Min., I
OH
= –4.0 mA)
Output LOW Voltage (V
DD
= Min., I
OL
= +4.0 mA)
Input HIGH Voltage
Input LOW Voltage
Output Leakage Current
Input Leakage Current Except TDI, TMS, MRST
Input Leakage Current TDI, TMS, MRST
Operating Current for
(V
= Max.,I
OUT
= 0 mA), Outputs
Disabled
2.4
2.4
0.4
0.4
0.4
2.0
2.0
2.0
0.8
10
10
0.1
300
0.8
10
10
0.1
300
0.8
10
10
0.1
–10
–10
–1.0
–10
–10
–1.0
–10
–10
–1.0
CYD01S36V
CYD02S36V/
CYD04S36V
CYD09S36V
CYD18S36V
225
225
450
600
370
410
90
540
580
115
315
450
I
SB1[27]
Standby Current (Both Ports TTL Level)
CE
L
and CE
R
≥
V
IH
, f = f
MAX
Standby Current (One Port TTL Level)
CE
L
| CE
R
≥
V
IH
, f = f
MAX
Standby Current (Both Ports CMOS Level)
CE
L
and CE
R
≥
V
DD
– 0.2V, f = 0
Standby Current (One Port CMOS Level)
CE
L
| CE
R
≥
V
IH
, f = f
MAX
Operating Current (VDDIO = Max,
Iout = 0 mA, f = 0) Outputs Disabled
Core Operating Current for (V
DD
= Max., I
OUT
= 0
mA), Outputs Disabled
90
115
mA
I
SB2[27]
160
210
160
210
mA
I
SB3[27]
55
75
55
75
mA
I
SB4[27]
160
210
160
210
mA
I
SB5
CYD18S36V
75
75
mA
I
CORE[13]
0
0
0
0
0
0
mA
Capacitance
[28]
Part Number
CYD01S36/
CYD02S36V/
CYD04S36V
Parameter
C
IN
Description
Input Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V
Max.
13
Unit
pF
C
OUT
C
IN
C
OUT
Output Capacitance
Input Capacitance
Output Capacitance
10
22
pF
pF
pF
CYD09S36V
10
[29]
Notes:
25.The voltage on any input or I/O pin can not exceed the power pin during power-up.
26.Pulse width < 20 ns.
27.I
SB1
, I
, I
and I
are not applicable for CYD18S36V because it cannot be powered down by using chip enable pins.
28.C
also references C
.
29.Except INT and CNTINT which are 20 pF.
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CYD09S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步雙端口RAM)
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