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參數(shù)資料
| 型號： | CY7C1474V33-250BGI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 1M X 72 ZBT SRAM, 3 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 |
| 文件頁數(shù)： | 29/29頁 |
| 文件大?。?/td> | 471K |
| 代理商： | CY7C1474V33-250BGI |
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CY7C1470V33
CY7C1472V33
CY7C1474V33
Document #: 38-05289 Rev. *I
Page 29 of 29
*H
416221
See ECN
RXU
Converted from Preliminary to Final
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed Three-state to Tri-state
Changed the description of I
X
from Input Load Current to Input Leakage
Current on page# 18
Changed the I
X
current values of MODE on page # 18 from –5
μ
A and 30
μ
A
to –30
μ
A and 5
μ
A
Changed the I
X
current values of ZZ on page # 18 from –30
μ
A and 5
μ
A
to –5
μ
A and 30
μ
A
Changed V
DDQ
<
VDD
to V
DDQ
< V
DD
in page #18
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information Table
Corrected the typo in the pin configuration for 209-Ball FBGA pinout
(Corrected the ball name for H9 to V
SS
from V
SSQ
).
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND.
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP
AC Switching Characteristics table.
Updated the Ordering Information table.
*I
472335
See ECN
VKN
Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33 72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL Architecture
Document Number: 38-05289
Orig. of
Change
REV.
ECN No.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1474V33-250BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1475V25-100BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-100BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-133BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-133BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1475BV25-133BGXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 72MB (1Mx72) 2.5v 133MHz FLO-THRU 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1475V33-100AXC | 制造商:Cypress Semiconductor 功能描述:72MB (1MBX72) NOBL FLOW-THRU, 3.3V CORE, 2.5/3.3V I/O - Bulk |
| CY7C1475V33-100BGC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 72MBIT 1MX72 8.5NS 209FBGA - Bulk |
| CY7C1475V33-133BGC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC OCTAL 3.3V 72MBIT 1MX72 6.5NS 209FBGA - Bulk |
| CY7C14802BC | 制造商:Cypress Semiconductor 功能描述: |
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