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參數(shù)資料
| 型號： | CY7C1474V33-250BGI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 1M X 72 ZBT SRAM, 3 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1.76 MM HEIGHT, FBGA-209 |
| 文件頁數(shù)： | 10/29頁 |
| 文件大?。?/td> | 471K |
| 代理商： | CY7C1474V33-250BGI |
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CY7C1470V33
CY7C1472V33
CY7C1474V33
Document #: 38-05289 Rev. *I
Page 10 of 29
Partial Write Cycle Description
[1, 2, 3, 8]
Function (CY7C1470V33)
WE
BW
d
X
BW
c
X
BW
b
X
BW
a
X
Read
H
Write – No bytes written
L
H
H
H
H
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Bytes b, a
L
H
H
H
L
L
H
H
L
H
L
H
H
L
L
Write Byte c – (DQ
c
and
DQP
c
)
Write Bytes c, a
L
H
L
H
H
L
H
L
H
L
Write Bytes c, b
L
H
L
L
H
Write Bytes c, b, a
L
H
L
L
L
Write Byte d – (DQ
d
and
DQP
d
)
Write Bytes d, a
L
L
H
H
H
L
L
H
H
L
Write Bytes d, b
L
L
H
L
H
Write Bytes d, b, a
L
L
H
L
L
Write Bytes d, c
L
L
L
H
H
Write Bytes d, c, a
L
L
L
H
L
Write Bytes d, c, b
L
L
L
L
H
Write All Bytes
L
L
L
L
L
Function (CY7C1472V33)
WE
BW
b
x
BW
a
x
Read
H
Write – No Bytes Written
L
H
H
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Both Bytes
L
H
L
L
L
H
L
L
L
Function (CY7C1474V33)
WE
BW
x
x
Read
H
Write – No Bytes Written
L
H
Write Byte X
(DQ
x
and
DQP
x)
Write All Bytes
L
L
L
All BW = L
Note:
8. Table only lists a partial listing of the Byte Write combinations. Any combination of BW
[a:d]
is valid. Appropriate Write will be done based on which Byte Write is
active.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1474V33-250BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1475V25-100BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-100BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-133BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
| CY7C1475V25-133BGXI | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1475BV25-133BGXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 72MB (1Mx72) 2.5v 133MHz FLO-THRU 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1475V33-100AXC | 制造商:Cypress Semiconductor 功能描述:72MB (1MBX72) NOBL FLOW-THRU, 3.3V CORE, 2.5/3.3V I/O - Bulk |
| CY7C1475V33-100BGC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 72MBIT 1MX72 8.5NS 209FBGA - Bulk |
| CY7C1475V33-133BGC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC OCTAL 3.3V 72MBIT 1MX72 6.5NS 209FBGA - Bulk |
| CY7C14802BC | 制造商:Cypress Semiconductor 功能描述: |
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