參數(shù)資料
型號(hào)： CY7C1475V25-100BGXI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
中文描述： 1M X 72 ZBT SRAM, 8.5 ns, PBGA209
封裝： 14 X 22 MM, 1.76 MM HEIGHT, LEAD FREE, FBGA-209
文件頁(yè)數(shù)： 1/32頁(yè)
文件大?。?/td> 928K
代理商： CY7C1475V25-100BGXI
72-Mbit (2M x 36/4M x 18/1M x 72)
Flow-Through SRAM with NoBL Architecture
CY7C1471V25
CY7C1473V25
CY7C1475V25
Cypress Semiconductor Corporation
Document #: 38-05287 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 04, 2007
Features
No Bus Latency (NoBL) architecture eliminates dead
cycles between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT devices
Internally self timed output buffer control to eliminate the
need to use OE
Registered inputs for flow through operation
Byte Write capability
2.5V/1.8V IO supply (V
DDQ
)
Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
Clock Enable (CEN) pin to enable clock and suspend
operation
Synchronous self timed writes
Asynchronous Output Enable (OE)
CY7C1471V25, CY7C1473V25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-Ball FBGA package. CY7C1475V25
available in Pb-free and non-Pb-free 209-Ball FBGA
package.
Three Chip Enables (CE
1
, CE
2
, CE
3
) for simple depth
expansion.
Automatic power down feature available using ZZ mode or
CE deselect.
IEEE 1149.1 JTAG Boundary Scan compatible
Burst Capability - linear or interleaved burst order
Low standby power
Functional Description
[1]
The CY7C1471V25, CY7C1473V25, and CY7C1475V25 are
2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through burst
SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471V25, CY7C1473V25, and
CY7C1475V25 are equipped with the advanced No Bus
Latency (NoBL) logic required to enable consecutive read or
write operations with data transferred on every clock cycle.
This feature dramatically improves the throughput of data
through the SRAM, especially in systems that require frequent
write-read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by two or four Byte Write Select
(BW
X
) and a Write Enable (WE) input. All writes are conducted
with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
133 MHz
6.5
305
120
100 MHz
8.5
275
120
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note
1. For best practice recommendations, refer to the Cypress application note
AN1064, SRAM System Guidelines
.
相關(guān)PDF資料
PDF描述
CY7C1475V25-133BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1475V25-133BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1475V25 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
CY7C1473V25 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
CY7C1475V33 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
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