參數(shù)資料
型號(hào): CY7C1475V25-100BGXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
中文描述: 1M X 72 ZBT SRAM, 8.5 ns, PBGA209
封裝: 14 X 22 MM, 1.76 MM HEIGHT, LEAD FREE, FBGA-209
文件頁(yè)數(shù): 12/32頁(yè)
文件大小: 928K
代理商: CY7C1475V25-100BGXI
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *I
Page 12 of 32
Truth Table for Read/Write
The read-write truth table for CY7C1471V25 follows.
[2, 3, 9]
Function
WE
H
BW
A
X
BW
B
X
BW
C
X
BW
D
X
Read
Write No bytes written
L
H
H
H
H
Write Byte A – (DQ
A
and DQP
A
)
Write Byte B – (DQ
B
and DQP
B
)
Write Byte C – (DQ
C
and DQP
C
)
Write Byte D – (DQ
D
and DQP
D
)
Write All Bytes
L
L
H
H
H
L
H
L
H
H
L
H
H
L
H
L
H
H
H
L
L
L
L
L
L
Truth Table for Read/Write
The read-write truth table for CY7C1473V25 follows.
[2, 3, 9]
Function
WE
BW
b
X
BW
a
X
Read
H
Write – No Bytes Written
L
H
H
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Both Bytes
L
H
L
L
L
H
L
L
L
Truth Table for Read/Write
The read-write truth table for CY7C1475V25 follows.
[2, 3, 9]
Function
WE
BW
x
X
Read
H
Write – No Bytes Written
Write Byte X
(DQ
x
and
DQP
x)
Write All Bytes
L
H
L
L
L
All BW = L
Note
9. Table lists only a partial listing of the byte write combinations. Any combination of BW
X
is valid. Appropriate write is based on which byte write is active.
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CY7C1475V25-133BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1475V25-133BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1475V25 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
CY7C1473V25 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
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參數(shù)描述
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