參數(shù)資料
型號(hào)： CY7C1471V33-133BZXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述： 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件頁(yè)數(shù)： 25/29頁(yè)
文件大?。?/td> 375K
代理商： CY7C1471V33-133BZXC
PRELIMINARY
CY7C1471V33
CY7C1473V33
CY7C1475V33
Document #: 38-05288 Rev. *E
Page 25 of 29
ZZ Mode Timing
[27, 28]
Ordering Information
Speed
(MHz)
133
Ordering Code
CY7C1471V33-133AXC
CY7C1473V33-133AXC
CY7C1471V33-133BZC
CY7C1473V33-133BZC
CY7C1475V33-133BGC
CY7C1471V33-133BZXC
CY7C1473V33-133BZXC
CY7C1475V33-133BGXC
Package
Name
A101
Part and Package Type
Operating
Range
Commercial
Lead-Free 100-lead Thin Quad Flat Pack (14 x 20 x
1.4mm)
BB165C
165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
BB209A
BB165C
209-ball Ball Grid Array (14 × 22 × 1.76 mm)
Lead-Free 165-ball Fine-Pitch Ball Grid Array (15 x 17
x 1.4mm)
BB209A
Lead-Free 209-ball Ball Grid Array (14 × 22 × 1.76
mm)
Lead-Free 100-lead Thin Quad Flat Pack (14 x 20 x
1.4mm)
100
CY7C1471V33-100AXC
CY7C1473V33-100AXC
CY7C1471V33-100BZC
CY7C1473V33-100BZC
CY7C1475V33-100BGC
CY7C1471V33-100BZXC
CY7C1473V33-100BZXC
CY7C1475V33-100BGXC
A101
BB165C
165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4mm)
BB209A
BB165C
209-ball Ball Grid Array (14 × 22 × 1.76 mm)
Lead-Free 165-ball Fine-Pitch Ball Grid Array (15 x 17
x 1.4mm)
BB209A
Lead-Free 209-ball Ball Grid Array (14 × 22 × 1.76
mm)
Please contact your local Cypress sales representative for availability of these parts.
Lead-free BG packages (Ordering Code: BGX) will be available in 2005.
Notes:
27.Device must be deselected when entering ZZ mode. See Truth Table for all possible signal conditions to deselect the device.
28.DQs are in high-Z when exiting ZZ sleep mode.
Switching Waveforms
(continued)
tZZ
I
SUPPLY
CLK
ZZ
tZZREC
ALL INPUTS
(except ZZ)
DON’T CARE
IDDZZ
tZZI
tRZZI
Outputs (Q)
High-Z
DESELECT or READ Only
相關(guān)PDF資料
PDF描述
CY7C1471V33-100AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1474V33-250BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
CY7C1474V33-250BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
CY7C1475V25-100BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1475V25-100BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1471XC 制造商:Cypress Semiconductor 功能描述:
CY7C14722AC 制造商:Cypress Semiconductor 功能描述:
CY7C14722BC 制造商:Cypress Semiconductor 功能描述:
CY7C1472BC 制造商:Cypress Semiconductor 功能描述:
CY7C1472BV25-200AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (4Mx18) 2.5v 200MHz 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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