參數(shù)資料
型號: CY7C1471V33-133BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述: 2M X 36 ZBT SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165
文件頁數(shù): 18/29頁
文件大?。?/td> 375K
代理商: CY7C1471V33-133BZXC
PRELIMINARY
CY7C1471V33
CY7C1473V33
CY7C1475V33
Document #: 38-05288 Rev. *E
Page 18 of 29
Boundary Scan Exit Order (x18)
Bit #
1
2
3
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5
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9
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18
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30
31
32
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165-Ball ID
D2
E2
F2
G2
J1
K1
L1
M1
N1
R1
R2
R3
P2
R4
P6
R6
N6
P11
R8
P3
P4
P8
P9
P10
R9
R10
R11
M10
L10
K10
J10
H11
G11
F11
E11
D11
C11
A11
A10
B10
A9
B9
A8
B8
45
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53
54
A7
B7
B6
A6
B5
A4
B3
A3
A2
B2
Boundary Scan Exit Order (x72)
Bit #
1
2
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6
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18
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209-Ball ID
A1
A2
B1
B2
C1
C2
D1
D2
E1
E2
F1
F2
G1
G2
H1
H2
J1
J2
L1
L2
M1
M2
N1
N2
P1
P2
R2
R1
T1
T2
U1
Boundary Scan Exit Order (x18)
(continued)
Bit #
165-Ball ID
相關PDF資料
PDF描述
CY7C1471V33-100AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1474V33-250BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
CY7C1474V33-250BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL⑩ Architecture
CY7C1475V25-100BGI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1475V25-100BGXI 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL⑩ Architecture
相關代理商/技術參數(shù)
參數(shù)描述
CY7C1471XC 制造商:Cypress Semiconductor 功能描述:
CY7C14722AC 制造商:Cypress Semiconductor 功能描述:
CY7C14722BC 制造商:Cypress Semiconductor 功能描述:
CY7C1472BC 制造商:Cypress Semiconductor 功能描述:
CY7C1472BV25-200AXC 功能描述:靜態(tài)隨機存取存儲器 72MB (4Mx18) 2.5v 200MHz 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray