參數(shù)資料
型號: CY7C1393BV18-300BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述: 1M X 18 DDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 25/27頁
文件大?。?/td> 446K
代理商: CY7C1393BV18-300BZXC
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document Number: 38-05623 Rev. *C
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CY7C1392BV18-278BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-278BZXC
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51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
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51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-278BZXI
CY7C1393BV18-278BZXI
CY7C1394BV18-278BZXI
CY7C1392BV18-300BZC
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1992BV18-300BZC
CY7C1393BV18-300BZC
CY7C1394BV18-300BZC
CY7C1392BV18-300BZXC 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-300BZXC
CY7C1393BV18-300BZXC
CY7C1394BV18-300BZXC
CY7C1392BV18-300BZI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
CY7C1992BV18-300BZI
CY7C1393BV18-300BZI
CY7C1394BV18-300BZI
CY7C1392BV18-300BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
CY7C1992BV18-300BZXI
CY7C1393BV18-300BZXI
CY7C1394BV18-300BZXI
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free
278
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
Industrial
300
Commercial
Industrial
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Diagram
Package
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1393BV18-300BZXI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZXC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-167BZXI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
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CY7C1393CV18-250BXZC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
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CY7C1393JV18-300BZXC 功能描述:靜態(tài)隨機存取存儲器 1Mx18 1.8V DDRII SIO (2-Word Burst) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1393KV18-250BZI 功能描述:靜態(tài)隨機存取存儲器 18432KB 1ms 380mA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray