參數(shù)資料
型號: CY7C1353F
廠商: Cypress Semiconductor Corp.
英文描述: 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
中文描述: 4字節(jié)(256 × 18)流通過總線延遲結(jié)構(gòu)的SRAM
文件頁數(shù): 8/13頁
文件大小: 324K
代理商: CY7C1353F
CY7C1353F
Document #: 38-05212 Rev. *B
Page 8 of 13
I
SB3
Automatic CE Power-down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
V
DDQ
– 0.3V or V
IN
0.3V,
f = f
MAX
, inputs switching
7.5-ns cycle, 133 MHz
8.5-ns cycle, 117 MHz
10-ns cycle, 100 MHz
15-ns cycle, 66 MHz
All speeds
75
70
65
45
45
mA
mA
mA
mA
mA
I
SB4
Automatic CE Power-down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V, f =
0, inputs static
Thermal Resistance
[11]
Parameters
Θ
JA
Description
Test Conditions
TQFP Typ.
41.83
Unit
°C/W
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA / JESD51.
Θ
JC
9.99
°C/W
Capacitance
[11]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V
V
DDQ
=3.3V
Max.
5
5
5
Unit
pF
pF
pF
C
IN
C
CLOCK
C
I/O
Input Capacitance
Clock Input Capacitance
I/O Capacitance
Electrical Characteristics
Over the Operating Range(continued)
[9,10]
Parameter
Description
Test Conditions
Min.
Max.
Unit
AC Test Loads and Waveforms
Note:
11.Tested initially and after any design or process changes that may affect these parameters.
OUTPUT
R = 317
R = 351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.5V
3.3V
ALL INPUT PULSES
V
DD
GND
90%
10%
90%
10%
1ns
1ns
(c)
OUTPUT
R = 1667
R =1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.25V
2.5V
ALL INPUT PULSES
V
DD
GND
90%
10%
90%
10%
1ns
1ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
相關(guān)PDF資料
PDF描述
CY7C1353F-100AC 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1353F-100AI 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1353F-117AC 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1353F-117AI 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1353F-133AC 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1353F-100AC 功能描述:IC SRAM 4.5MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設(shè)備封裝:48-TSOP 包裝:托盤
CY7C1353F-100ACT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8ns 100-Pin TQFP T/R 制造商:Rochester Electronics LLC 功能描述:4M- 256KX18 3.3V FLOW-THROUGH-NOBL SRAM - Tape and Reel
CY7C1353G-100AXC 功能描述:靜態(tài)隨機存取存儲器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1353G-100AXCT 功能描述:靜態(tài)隨機存取存儲器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1353G-133AXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: