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參數(shù)資料
| 型號： | CY7C1353F |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture |
| 中文描述： | 4字節(jié)（256 × 18）流通過總線延遲結(jié)構(gòu)的SRAM |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 324K |
| 代理商： | CY7C1353F |
CY7C1353F
Document #: 38-05212 Rev. *B
Page 11 of 13
Notes:
18.For this waveform ZZ is tied low.
19.When CE is LOW, CE
is LOW, CE
is HIGH and CE
is LOW. When CE is HIGH, CE
is HIGH or CE
is LOW or CE
is HIGH.
20.Order of the Burst sequence is determined by the status of the MODE (0= Linear, 1= Interleaved). Burst operations are optional.
21.The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle.
22.Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device.
23.DQs are in high-Z when exiting ZZ sleep mode.
NOP, STALL and DESELECT Cycles
[18, 19, 21]
1
ZZ Mode Timing
[22,23]
Switching Waveforms
READ
Q(A3)
4
5
6
7
8
9
10
A3
A4
A5
D(A4)
2
3
CLK
CE
WE
CEN
BW
[A:B]
ADV/LD
ADDRESS
DQ
COMMAND
WRITE
D(A4)
STALL
WRITE
D(A1)
READ
Q(A2)
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
DON’T CARE
UNDEFINED
tCHZ
A1
A2
Q(A2)
D(A1)
Q(A3)
tDOH
Q(A5)
tZZ
I
SUPPLY
CLK
ZZ
tZZREC
ALL INPUTS
(except ZZ)
DON’T CARE
IDDZZ
tZZI
tRZZI
Outputs (Q)
High-Z
DESELECT or READ Only
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PDF描述 |
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| CY7C1353F-100AC | 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture |
| CY7C1353F-100AI | 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture |
| CY7C1353F-117AC | 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture |
| CY7C1353F-117AI | 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture |
| CY7C1353F-133AC | 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1353F-100AC | 功能描述:IC SRAM 4.5MBIT 100MHZ 100LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| CY7C1353F-100ACT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8ns 100-Pin TQFP T/R 制造商:Rochester Electronics LLC 功能描述:4M- 256KX18 3.3V FLOW-THROUGH-NOBL SRAM - Tape and Reel |
| CY7C1353G-100AXC | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1353G-100AXCT | 功能描述:靜態(tài)隨機存取存儲器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1353G-133AXC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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