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參數(shù)資料
| 型號： | CY7C1223F |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mb (128K x 18) Pipelined DCD Sync SRAM |
| 中文描述： | 2 MB的（128K的× 18）流水線雙氰胺同步靜態(tài)存儲器 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 328K |
| 代理商： | CY7C1223F |
CY7C1223F
Document #: 38-05418 Rev. *A
Page 7 of 15
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Current
Current
Current
H
X
H
X
X
X
X
X
X
L
L
L
X
H
X
H
H
H
H
H
H
H
L
L
H
X
X
L-H
L-H
L-H
three-state
D
D
Truth Table for Read/Write
[2, 3]
Function
GW
H
BWE
H
BW
A
X
BW
B
X
Read
Read
H
L
H
H
Write byte A - (DQ
A
and DQP
A
)
Write byte B- (DQ
B
and DQP
B
)
Write all bytes
H
L
L
H
H
L
H
L
H
L
L
L
Write all bytes
L
X
X
X
ZZ Mode Electrical Characteristics
Parameter
I
DDZZ
t
ZZS
t
ZZREC
t
ZZI
t
RZZI
Description
Test Conditions
Min.
Max.
40
2t
CYC
Unit
mA
ns
ns
ns
ns
Snooze mode standby current
Device operation to ZZ
ZZ recovery time
ZZ Active to snooze current
ZZ inactive to exit snooze current
ZZ > V
DD
0.2V
ZZ > V
DD
0.2V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
2t
CYC
2t
CYC
0
Truth Table
(continued)
[2, 3, 4, 5, 6]
Operation
Address
Used
CE
1
CE
3
CE
2
ZZ ADSP ADSC
ADV
WRITE
OE
CLK
DQ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1243V18-300BZI | 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1241V18 | 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1241V18-300BZC | 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1241V18-300BZI | 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1241V18-300BZXC | 36-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1223F-133AC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1223H-166AXC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 2MBIT 128KX16 3.5NS 100TQFP - Bulk |
| CY7C1231H-133AXC | 功能描述:靜態(tài)隨機存取存儲器 128KX18 NoBL FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C123-7VC | 制造商:Cypress Semiconductor 功能描述:Static RAM, 256x4, 24 Pin, Plastic, SOJ |
| CY7C1243KV18-400BZC | 功能描述:靜態(tài)隨機存取存儲器 36MB (2Mx18) 1.8v 400MHz QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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