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參數(shù)資料
| 型號(hào)： | CY62157CV30LL-70BAE |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16 Static RAM |
| 中文描述： | 512K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 10 MM, 1.20 MM HEIGHT, FBGA-48 |
| 文件頁(yè)數(shù)： | 8/13頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | CY62157CV30LL-70BAE |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
CY62157CV30/33
Document #: 38-05014 Rev. *F
Page 8 of 13
Write Cycle No. 1 (WE Controlled)
[14, 18, 19]
Notes:
18.Data I/O is high-impedance if OE = V
.
19.If CE
goes HIGH or CE
goes LOW simultaneously with WE HIGH, the output remains in a high-impedance state.
20.During this period, the I/Os are in output state and input signals should not be applied.
Switching Waveforms
(continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
VALID
CE
1
ADDRESS
CE
2
WE
DATA I/O
OE
NOTE 20
BHE/BLE
t
BW
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| CY62157CV33LL-70BAE | 512K x 16 Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62157CV30LL-70BAI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 8M-Bit 512K x 16 70ns 48-Pin FBGA 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY62157CV30LL-70BAIT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 8M-Bit 512K x 16 70ns 48-Pin FBGA T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| CY62157CV33LL-55BAI | 制造商:Cypress Semiconductor 功能描述: |
| CY62157CV33LL-55BAIT | 制造商:Cypress Semiconductor 功能描述: |
| CY62157CV33LL-70BAI | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:8MB (512KX16) SRAM SLOW 3.3V SUPER LOW POWER - Bulk |
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