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參數(shù)資料
| 型號(hào)： | CY62157CV30LL-70BAE |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16 Static RAM |
| 中文描述： | 512K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 6 X 10 MM, 1.20 MM HEIGHT, FBGA-48 |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 328K |
| 代理商： | CY62157CV30LL-70BAE |
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CY62157CV30/33
Document #: 38-05014 Rev. *F
Page 3 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential...–0.5V to V
ccmax
+ 0.5V
DC Voltage Applied to Outputs
in High-Z State
[5]
....................................–0.5V to V
CC
+ 0.3V
DC Input Voltage
[5]
.................................–0.5V to V
CC
+ 0.3V
Output Current into Outputs (LOW) .............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
[T
A
]
[6]
V
CC
CY62157CV30 Automotive-E –40°C to +125°C 2.7V – 3.3V
CY62157CV33 Automotive-A –40°C to +85°C 3.0V – 3.6V
Automotive-E –40°C to +125°C
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
Description
Output HIGH Voltage I
OH
= –1.0 mA
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply
Current
Automatic CE
Power-Down
Current— CMOS
Inputs
Automatic CE
Power-Down
Current—CMOS
Inputs
Test Conditions
CY62157CV30-70
Min.
Typ.
[2]
2.4
Unit
V
V
V
V
μ
A
Max.
V
CC
= 2.7V
V
CC
= 2.7V
I
OL
= 2.1 mA
0.4
2.2
–0.3
–10
V
CC
+ 0.3V
0.8
+10
GND < V
I
< V
CC
I
OZ
GND < V
O
< V
CC
, Output Disabled
–10
+10
μ
A
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.3V
I
OUT
= 0 mA
CMOS Levels
7
15
3
mA
1.5
I
SB1
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.3V
8
70
μ
A
I
SB2
8
70
μ
A
Notes:
5. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
6. T
A
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62157CV30LL-70BAI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 8M-Bit 512K x 16 70ns 48-Pin FBGA 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY62157CV30LL-70BAIT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 8M-Bit 512K x 16 70ns 48-Pin FBGA T/R 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| CY62157CV33LL-55BAI | 制造商:Cypress Semiconductor 功能描述: |
| CY62157CV33LL-55BAIT | 制造商:Cypress Semiconductor 功能描述: |
| CY62157CV33LL-70BAI | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:8MB (512KX16) SRAM SLOW 3.3V SUPER LOW POWER - Bulk |
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