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參數(shù)資料
| 型號： | CY62147EV18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 4兆位（256K × 16）靜態(tài)RAM |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 388K |
| 代理商： | CY62147EV18 |
CY62147EV18 MoBL2
Document #: 38-05441 Rev. *F
Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may shorten the battery life of
the device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ...........................–0.2V to + 2.45V (V
CCmax
+ 0.2V)
DC Voltage Applied to Outputs
in High Z State
[4, 5]
...............–0.2V to 2.45V (V
CCmax
+ 0.2V)
DC Input Voltage
[4, 5]
...........–0.2V to 2.45V (V
CCmax
+ 0.2V)
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current ....................................................> 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
[6]
CY62147EV18LL Industrial –40°C to +85°C 1.65V to 2.25V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
55 ns
Typ
[1]
Unit
Min
Max
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Output HIGH Voltage
I
OH
= –0.1 mA
I
OL
= 0.1 mA
V
CC
=1.65V to 2.25V
V
CC
=1.65V to 2.25V
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
max
= 1/t
RC
1.4
V
Output LOW Voltage
0.2
V
Input HIGH Voltage
1.4
V
CC
+ 0.2
0.4
V
Input LOW Voltage
–0.2
V
Input Leakage Current
–1
+1
μ
A
Output Leakage Current
–1
+1
μ
A
V
CC
Operating Supply
Current
V
CC(max)
=2.25V
I
OUT
= 0 mA
CMOS levels
15
20
mA
f = 1 MHz
V
CC(max)
=2.25V
V
CC(max)
=2.25V
2
2.5
mA
I
SB1
Automatic CE Power Down
Current–CMOS Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
max
(Address and Data Only),
f = 0 (OE, WE, BHE, and BLE)
1
7
μ
A
I
SB2[7]
Automatic CE Power Down
Current–CMOS Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0
V
CC(max)
=2.25V
1
7
μ
A
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
C
IN
C
OUT
Input Capacitance
T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ)
10
pF
Output Capacitance
10
pF
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
=V
+0.5V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
μ
s ramp time from 0 to V
and 200
μ
s wait time after V
stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CY62147EV18_10 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM |
| CY62147EV18LL | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM |
| CY62147EV18LL-45BVXI | 功能描述:IC SRAM 4MBIT 45NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY62147EV18LL-45BVXIT | 功能描述:IC SRAM 4MBIT 45NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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