參數(shù)資料
型號: CY62147EV18
廠商: Cypress Semiconductor Corp.
英文描述: 4-Mbit (256K x 16) Static RAM
中文描述: 4兆位(256K × 16)靜態(tài)RAM
文件頁數(shù): 11/12頁
文件大?。?/td> 388K
代理商: CY62147EV18
CY62147EV18 MoBL2
Document #: 38-05441 Rev. *F
Page 11 of 12
Document History Page
Document Title: CY62147EV18 MoBL2 4-Mbit (256K x 16) Static RAM
Document Number: 38-05441
Issue
Date
Change
**
201580
01/08/04
AJU
*A
247009
See ECN
SYT
REV.
ECN NO.
Orig. of
Description of Change
New Datasheet
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Changed V
CCMax
from 2.20 to 2.25 V
Changed V
CC
stabilization time in footnote #8 from 100
μ
s to 200
μ
s
Removed Footnote #15 (t
LZBE
) from Previous Revision
Changed I
CCDR
from 2.0
μ
A to 2.5
μ
A
Changed typo in Data Retention Characteristics (t
R
) from 100
μ
s to t
RC
ns
Changed t
OHA
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
Changed t
HZOE
, t
HZBE
, t
HZWE
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for
45 ns Speed Bin
Changed t
SCE
and t
BW
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns
Speed Bin
Changed t
HZCE
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns Speed Bin
Changed t
SD
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
45 ns Speed Bin
Changed t
DOE
from 15 to 18 ns for 35 ns Speed Bin
Changed Ordering Information to include Pb-Free Packages
Changed from Preliminary to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from “3901
North First Street” to “198 Champion Court”
Removed 35 ns Speed Bin
Removed “L” version of CY62147EV18
Changed ball E3 from DNU to NC
Changed I
CC
(typ) value from 1.5 mA to 2 mA at f = 1 MHz
Changed I
CC
(max) value from 2 mA to 2.5 mA at f = 1 MHz
Changed I
CC
(typ) value from 12 mA to 15 mA at f = f
max
Changed I
SB1
and I
SB2
Typ values from 0.7
μ
A to 1
μ
A and Max values from 2.5
μ
A to
7
μ
A
Extended undershoot limit to –2V in footnote #5
Changed I
CCDR
Max from 2.5
μ
A to 3
μ
A
Added I
CCDR
typical value
Changed t
LZOE
from 3 ns to 5 ns
Changed t
LZCE
, t
LZBE
and t
LZWE
from 6 ns to 10 ns
Changed t
HZCE
from 22 ns to 18 ns
Changed t
PWE
from 30 ns to 35 ns
Changed t
SD
from 22 ns to 25 ns
Updated the package diagram 48-pin VFBGA from *B to *D
Updated the ordering information table and replaced Package Name Column with
Package Diagram
Replaced 45ns speed bin with 55 ns
Added footnote #8 related to I
SB2
and
I
CCDR
Added footnote #13 related AC timing parameters
Changed t
WC
specification from 45 ns to 55 ns
Changed t
SCE
, t
AW
, t
PWE
, t
BW
spec from 35 ns to 40 ns
Changed t
HZWE
specification from 18 ns to 20 ns
*B
414820
See ECN
ZSD
*C
*D
571786
908120
See ECN
See ECN
VKN
VKN
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PDF描述
CY62147EV18LL-55BVXI 4-Mbit (256K x 16) Static RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62147EV18_10 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM
CY62147EV18LL 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM
CY62147EV18LL-45BVXI 功能描述:IC SRAM 4MBIT 45NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動(dòng) SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY62147EV18LL-45BVXIT 功能描述:IC SRAM 4MBIT 45NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動(dòng) SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY62147EV18LL-55BVXI 功能描述:靜態(tài)隨機(jī)存取存儲器 4M MoBL Ultra Lo PWR HI SPD MicroPWR RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray