參數(shù)資料
型號： BUK752R3-40C
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS standard level FET
中文描述： N溝道TrenchMOS標準電平場效應(yīng)管
封裝： BUK752R3-40C<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<Always Pb-free,;
文件頁數(shù)： 7/14頁
文件大?。?/td> 222K
代理商： BUK752R3-40C
BUK752R3-40C_3
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 26 January 2009
7 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
6.
Characteristics
Table 6.
Symbol
Static characteristics
V
(BR)DSS
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
I
D
= 250 μA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 μA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C; see
Figure 10
; see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C; see
Figure 10
; see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C; see
Figure 10
; see
Figure 11
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C; see
Figure 12
; see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C; see
Figure 12
; see
Figure 13
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
40
36
2
-
-
3
-
-
4
V
V
V
V
GS(th)
gate-source threshold
voltage
gate-source threshold
voltage
V
GSth
-
-
4.4
V
1
-
-
V
I
DSS
I
GSS
drain leakage current
gate leakage current
-
-
-
-
0.02
2
2
-
1
100
100
4.26
μA
nA
nA
m
R
DSon
drain-source on-state
resistance
-
1.96
2.3
m
I
DSS
Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
V
GS(pl)
gate-source plateau
voltage
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer
capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
D
internal drain
inductance
drain leakage current
-
-
500
μA
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V; see
Figure 15
-
-
-
-
175
49
67
5
-
-
-
-
nC
nC
nC
V
I
D
= 25 A; V
DS
= 32 V; see
Figure 15
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 16
-
-
-
8492
1606
1101
11323
1927
1508
pF
pF
pF
V
DS
= 30 V; R
L
= 1.2
; V
GS
= 10 V;
R
G(ext)
= 10
-
-
-
-
-
65
133
146
119
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
from drain lead 6 mm from package to
centre of die
from contact screw on mounting base to
centre of die
from source lead to source bonding pad
-
3.5
-
nH
L
S
internal source
inductance
-
7.5
-
nH
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C; see
Figure 14
I
S
= 20 A; dI
S
/dt = -100 A/μs; V
GS
= 0 V;
V
DS
= 30 V
-
0.85
1.2
V
t
rr
Q
r
reverse recovery time
recovered charge
-
-
75
57
-
-
ns
nC
相關(guān)PDF資料
PDF描述
BUK752R7-30B N-channel TrenchMOS standard level FET
BUK7535-100A N-channel TrenchMOS standard level FET
BUK7535-55A N-channel TrenchMOS standard level FET
BUK753R1-40B N-channel TrenchMOS standard level FET
BUL48A Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK752R3-40C,127 功能描述:MOSFET Trans MOSFET N-CH 40V 276A 3Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK752R3-40E 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 40V 120A TO220
BUK752R3-40E,127 制造商:NXP Semiconductors 功能描述:BUK752R3-40E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 40V 120A TO220AB
BUK752R7-30B 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK752R7-30B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*