參數(shù)資料
型號(hào)： BUK753R1-40B
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS standard level FET
中文描述： N溝道TrenchMOS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管
封裝： BUK753R1-40B<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,;
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 215K
代理商： BUK753R1-40B
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
BUK753R1-40B
N-channel TrenchMOS standard level FET
Rev. 3 — 8 February 2011
Product data sheet
T-2A
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
40
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3
; see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
-
-
75
A
P
tot
total power
dissipation
-
-
300
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11
;
see
Figure 12
-
2.6
3.1
m
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