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參數(shù)資料
| 型號(hào)： | BUK752R3-40C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管 |
| 封裝： | BUK752R3-40C<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 222K |
| 代理商： | BUK752R3-40C |
BUK752R3-40C
N-channel TrenchMOS standard level FET
Rev. 03 — 26 January 2009
Product data sheet
1.
Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation applications
1.4 Quick reference data
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
[1]
Refer to document 9397 750 12572 for further information.
[2]
Continuous current is limited by package.
Quick reference
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
;
T
mb
= 25 °C; see
Figure 2
Min
-
-
Typ
-
-
Max
40
100
Unit
V
A
[1]
[2]
P
tot
Dynamic characteristics
Q
GD
gate-drain charge
total power dissipation
-
-
333
W
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 32 V; see
Figure 15
-
67
-
nC
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 12
;
see
Figure 13
-
1.96
2.3
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
= 100 A; V
sup
≤
40 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
1.2
J
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|---|---|
| BUK752R3-40C,127 | 功能描述:MOSFET Trans MOSFET N-CH 40V 276A 3Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK752R3-40E | 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 40V 120A TO220 |
| BUK752R3-40E,127 | 制造商:NXP Semiconductors 功能描述:BUK752R3-40E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 40V 120A TO220AB |
| BUK752R7-30B | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK752R7-30B,127 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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