參數(shù)資料
型號(hào)： BUK752R7-30B
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS standard level FET
中文描述： N溝道TrenchMOS標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管
封裝： BUK752R7-30B<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<week 1, 2005,;
文件頁(yè)數(shù)： 1/14頁(yè)
文件大小： 190K
代理商： BUK752R7-30B
BUK752R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 June 2010
Product data sheet
1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
[1]
Continuous current is limited by package.
Quick reference data
Parameter
drain-source
voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
Min
-
Typ
-
Max
30
Unit
V
I
D
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
-
-
75
A
P
tot
total power
dissipation
-
-
300
W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
; see
Figure 12
-
2.3
2.7
m
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
≤
30 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
2.3
J
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 10 V; I
D
= 25 A; V
DS
= 24 V;
T
j
= 25 °C; see
Figure 13
-
29
-
nC
相關(guān)PDF資料
PDF描述
BUK7535-100A N-channel TrenchMOS standard level FET
BUK7535-55A N-channel TrenchMOS standard level FET
BUK753R1-40B N-channel TrenchMOS standard level FET
BUL48A Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BUL49A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK752R7-30B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK752R7-60E 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO220
BUK752R7-60E,127 制造商:NXP Semiconductors 功能描述:BUK752R7-60E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO220AB
BUK7535-100A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7535-100A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*