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參數(shù)資料
| 型號： | BUK752R3-40C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標(biāo)準(zhǔn)電平場效應(yīng)管 |
| 封裝： | BUK752R3-40C<SOT78A (TO-220AB)|<<http://www.nxp.com/packages/SOT78A.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 222K |
| 代理商： | BUK752R3-40C |
BUK752R3-40C_3
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 26 January 2009
3 of 14
NXP Semiconductors
BUK752R3-40C
N-channel TrenchMOS standard level FET
4.
Limiting values
[1]
Refer to document 9397 750 12572 for further information.
[2]
Continuous current is limited by package.
[3]
Current is limited by chip power dissipation rating.
[4]
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[5]
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[6]
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[7]
Refer to application note AN10273 for further information.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 k
Min
-
-
-20
-
Max
40
40
20
100
Unit
V
V
V
A
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
;
see
Figure 3
;
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
;
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
;
see
Figure 3
;
T
mb
= 25 °C; t
p
≤
10 μs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1][2]
[1][2]
[1][3]
-
-
100
276
A
A
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
peak drain current
total power dissipation
storage temperature
junction temperature
-
-
-55
-55
1104
333
175
175
A
W
°C
°C
source current
T
mb
= 25 °C;
T
mb
= 25 °C;
t
p
≤
10 μs; pulsed; T
mb
= 25 °C
[1][3]
[1][2]
-
-
-
276
100
1104
A
A
A
I
SM
Avalanche ruggedness
E
DS(AL)S
peak source current
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
I
D
= 100 A; V
sup
≤
40 V; R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
1.2
J
E
DS(AL)R
see
Figure 4
;
[4][5]
[6][7]
-
-
J
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