參數(shù)資料
型號: BUK108-50GS
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
中文描述: 15 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 4/12頁
文件大?。?/td> 116K
代理商: BUK108-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK108-50GS
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
Input threshold voltage
Input supply current
Protection reset voltage
1
V
DS
= 5 V; I
D
= 1 mA
V
IS
= 10 V; normal operation
1.0
-
2.0
1.5
0.4
2.6
2.0
1.0
3.5
V
mA
V
Protection reset voltage
T
j
= 150 C
V
IS
= 10 V; protection latched
I
I
= 10 mA
to gate of power MOSFET
1.0
-
-
Input supply current
Input clamp voltage
Input series resistance
1.0
11
-
2.5
13
4
5.0
-
-
mA
V
k
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 7.5 A t
p
300
μ
s;
δ
0.01
V
DS
= 13 V; V
IS
= 10 V
MIN.
5
TYP.
9
MAX.
-
UNIT
S
I
D(SC)
Drain current
2
-
40
-
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C. R
I
= 50
. Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
DD
= 13 V; V
IS
= 10 V
resistive load R
L
= 4
V
DD
= 13 V; V
IS
= 0 V
resistive load R
L
= 4
V
DD
= 13 V; V
IS
= 10 V
inductive load I
DM
= 3 A
V
DD
= 13 V; V
IS
= 0 V
inductive load I
DM
= 3 A
-
1
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Rise time
-
4
-
Turn-off delay time
-
-
Fall time
-
5
-
Turn-on delay time
-
1
-
Rise time
-
0.5
-
Turn-off delay time
-
15
-
Fall time
-
0.5
-
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
25 C; V
IS
= 0 V
-
15
A
1
The input voltage below which the overload protection circuits will be reset.
2
During overload before short circuit load protection operates.
June 1996
4
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK109-50DL PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET)
BUK109-50GL PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET)
BUK109-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
BUK111-50GL Logic level TOPFET SMD version of BUK112-50GL
BUK112-50GL N-Channel Enhancement MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK109-50DL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK109-50DL,118 功能描述:MOSFET N-CH 50V 26A SOT404 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET,電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:TOPFET™ 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐,1.6 歐姆 電流 - 輸出 / 通道:205mA,410mA 電流 - 峰值輸出:500mA,1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC(0.295",7.50mm 寬) 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR)
BUK109-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK109-50GS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor TOPFET
BUK110-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET