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參數(shù)資料
| 型號(hào)： | BUK108-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| 中文描述： | 15 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 116K |
| 代理商： | BUK108-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK108-50GS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
R
th j-a
Junction to mounting base
-
-
2.5
3.1
K/W
Junction to ambient
minimum footprint FR4 PCB
(see fig. 33)
-
50
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
50
-
-
V
Drain-source clamping voltage
-
-
70
V
I
DSS
I
DSS
I
DSS
R
DS(ON)
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 50 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 40 V; V
IS
= 0 V; T
j
= 125 C
Drain-source on-state
resistance
-
-
-
0.5
1
10
10
20
100
μ
A
μ
A
μ
A
m
m
I
DM
= 7.5 A;
t
p
≤
300
μ
s;
δ
≤
0.01
V
IS
= 10 V
V
IS
= 5 V
-
-
65
85
100
125
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
Short circuit load protection
1
T
mb
= 25 C; L
≤
10
μ
H
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 10 V
t
d sc
Response time
V
DD
= 13 V; V
IS
= 10 V
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS
= 10 V; from I
D
≥
0.5 A
2
MIN.
TYP.
MAX.
UNIT
-
-
0.2
0.8
-
-
J
ms
150
-
-
C
1
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
June 1996
3
Rev 1.000
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| BUK109-50DL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK109-50DL,118 | 功能描述:MOSFET N-CH 50V 26A SOT404 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:TOPFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BUK109-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK109-50GS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PowerMOS transistor TOPFET |
| BUK110-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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