參數(shù)資料
型號(hào): BUJ403BX
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 6 A, 525 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, FULL PACK-3
文件頁(yè)數(shù): 7/7頁(yè)
文件大?。?/td> 58K
代理商: BUJ403BX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1999
7
Rev 1.100
相關(guān)PDF資料
PDF描述
BUJ403 Silicon Diffused Power Transistor
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BUK100-50GL PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK100-50GS PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK101-50DL PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
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