參數(shù)資料
型號： BUJ403BX
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述： 6 A, 525 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, FULL PACK-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 58K
代理商： BUJ403BX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
AVALANCHE ENERGY CAPABILITY
SYMBOL
PARAMETER
CONDITIONS
V
= 150V; V
BB
= -5V; L
C
=
15mH;L
B
= 1
μ
H
TYP.
MAX.
UNIT
EAS
Avalanche Energy Capability
1
T
hs
≤
110 C
-
1.0
mJ
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(550V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 2.0 A;I
B
= 0.4 A
I
C
= 2.0 A;I
B
= 0.4 A
I
C
= 1 mA; V
= 5 V
I
C
= 500 mA;V
= 5 V
I
C
= 2.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.2
0.5
UNIT
mA
mA
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
2
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
-
-
0.1
1.0
-
mA
mA
V
525
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.14
0.89
28
45
21
1.0
1.5
-
65
25
V
V
19
30
17
DC current gain
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 2.5 A; I
= -I
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.6
4.5
0.4
0.95
6.4
0.59
μ
s
μ
s
μ
s
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
si
t
fi
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
1.67
140
2.3
203
μ
s
ns
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
si
t
fi
Turn-off storage time
Turn-off fall time
1.9
144
2.7
216
μ
s
ns
1
Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche.
2
Measured with half sine-wave voltage (curve tracer).
November 1999
2
Rev 1.100
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