參數(shù)資料
型號： BUJ403
廠商： NXP Semiconductors N.V.
英文描述： Silicon Diffused Power Transistor
中文描述： 擴(kuò)散硅功率晶體管
文件頁數(shù)： 1/7頁
文件大小： 66K
代理商： BUJ403
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.15
15.5
170
MAX.
1200
1200
550
6
10
100
1.0
-
300
UNIT
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 0.4 A
I
C
= 3 A; V
CE
= 5 V
I
C
=2.5 A; I
B1
=0.5 A
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1200
550
1200
6
10
3
5
100
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
in free air
1 2 3
tab
b
c
e
December 1998
1
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUJ403A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BUJ403A,127 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 550V 6A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUJ403A/DG,127 功能描述:MOSFET NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUJ403A127 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BUJ403AX 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
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