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參數(shù)資料
| 型號(hào)： | BUK100-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 13.5 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 122K |
| 代理商： | BUK100-50GL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
D
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
13.5
40
150
125
V
A
W
C
m
APPLICATIONS
V
IS
= 5 V
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Low operating input current
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
RIG
1 2 3
tab
P
D
S
I
TOPFET
November 1996
1
Rev 1.300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK100-50GS | PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| BUK101-50 | PowerMOS transistor Logic level TOPFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK100-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK100-50GS | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK101-50 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50DL | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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