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參數(shù)資料
| 型號： | BUK100-50GL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 13.5 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 122K |
| 代理商： | BUK100-50GL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50GL
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25 C) = f(T
mb
)
Fig.3. Normalised continuous drain current.
I
D
% = 100
I
D
/I
D
(25 C) = f(T
mb
); conditions: V
IS
= 5 V
Fig.4. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.5. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
Fig.6. Typical output characteristics, T
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
μ
s & t
p
< t
d sc
Fig.7. Typical on-state characteristics, T
j
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 250
μ
s
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
t
D
D =
BUK100-50GL
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
BUK100-50GL
VDS / V
ID / A
40
35
30
25
20
15
10
5
0
3
2.5
3.5
4
4.5
5
5.5
6
VIS / V =
1
100
VDS / V
100
10
1
0.1
BUK100-50GL
10
ID & IDM / A
Overload protection characteristics not shown
DC
100 us
1 ms
10 ms
100 ms
10 us
tp =
RDS(ON)=VDSID
0
2
4
BUK100-50GL
VDS / V
ID / A
40
35
30
25
20
15
10
5
0
3
4
5
6
3.5
4.5
5.5
5
3
1
VIS / V =
November 1996
5
Rev 1.300
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PDF描述 |
|---|---|
| BUK100-50GS | PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| BUK101-50 | PowerMOS transistor Logic level TOPFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK100-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK100-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK101-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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