參數(shù)資料
型號： BUJ403BX
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述： 6 A, 525 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, FULL PACK-3
文件頁數(shù)： 1/7頁
文件大?。?/td> 58K
代理商： BUJ403BX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
fi
PARAMETER
Collector-emitter voltage peak value
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
18
-
-
-
0.14
21
140
MAX.
1200
1200
525
-
6
10
32
1.0
25
203
UNIT
V
V
V
V
A
A
W
V
T
hs
≤
25 C
I
C
= 2 A; I
B
= 0.4 A
I
C
= 2 A; V
CE
= 5 V
I
C
= 2.5 A; I
B1
= 0.5 A
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
V
EBO
Emitter-base voltage (open collector)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
16
-
-
-
-
-
-65
-
MAX.
1200
525
1200
-
6
10
3
5
32
150
150
UNIT
V
V
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
1 2 3
case
b
c
e
November 1999
1
Rev 1.100
相關(guān)PDF資料
PDF描述
BUJ403 Silicon Diffused Power Transistor
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