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參數(shù)資料
| 型號： | BUJ100B |
| 英文描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 350V五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 57K |
| 代理商： | BUJ100B |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(350V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 1 A; I
B
= 0.2 A
I
C
= 1 A; I
= 0.2 A
I
C
= 1mA; V
= 5 V
I
C
= 100mA; V
= 5 V
I
C
= 1.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
0.8
2.0
MAX.
100
500
UNIT
μ
A
μ
A
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
100
100
-
μ
A
μ
A
V
0.05
-
350
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.27
1.03
23
30
12
1.0
1.3
-
46
19
V
V
17
19
9
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 1.0 A; I
= -I
= 0.2 A;
R
L
= 75 ohms; V
BB2
= 4V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
1.0
1.95
0.22
1.28
2.61
0.30
μ
s
μ
s
μ
s
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
si
t
fi
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.55
56
0.74
76
μ
s
ns
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
si
t
fi
Turn-off storage time
Turn-off fall time
-
-
1.5
140
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
May 2001
2
Rev 1.000
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