- 您現在的位置：買賣IC網 > PDF目錄369561 > BUJ100B TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-92 PDF資料下載
參數資料
| 型號： | BUJ100B |
| 英文描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 350V五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 57K |
| 代理商： | BUJ100B |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100B
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 (TO92) envelope intended
for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FE
t
fi
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.27
12
56
MAX.
700
700
350
1.0
2.0
2.0
1.0
19
76
UNIT
V
V
V
A
A
W
V
T
lead
≤
25 C
I
C
B
= 0.2 A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 1.0 A; I
B1
= 0.2 A
Fall time (Inductive)
ns
PINNING - SOT54 (TO92)
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
350
700
1.0
2.0
0.5
1.0
2.0
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-lead
R
th j-a
PARAMETER
Thermal resistance junction to lead
Thermal resistance junction to ambient
CONDITIONS
TYP.
-
150
MAX.
60
-
UNIT
K/W
K/W
pcb mounted; lead
length = 4 mm
b
c
e
3 2 1
May 2001
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| BUJ103AU | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ105AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ106AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ403AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BUJ403BX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BUJ100B,116 | 功能描述:兩極晶體管 - BJT TAPERA BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR | 制造商:NXP Semiconductors 功能描述:TRANSISTORNPN400V1ATO-92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,400V,1A,TO-92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,NPN,400V,1A,TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2.1W; DC Collector Current:1A; DC Current Gain hFE:7.5; No. of Pins:3 ;RoHS Compliant: Yes |
| BUJ100LR,126 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR,412 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ100LR126 | 制造商:NXP Semiconductors 功能描述:NPN POWER TRANSISTOR 400 V 1 A 3-TO-9 |
發(fā)布緊急采購，3分鐘左右您將得到回復。