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參數(shù)資料
| 型號： | BSP090 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 5.7 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 124K |
| 代理商： | BSP090 |
1997 Mar 13
5
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP090
CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
1
TYP.
800
400
100
21
MAX.
2.8
500
±
100
0.15
0.09
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
=
10
μ
A
V
GS
= V
DS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
24 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
=
4.5 V; I
D
=
1.4 A
V
GS
=
10 V; I
D
=
2.8 A
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
=
10 V; V
DD
=
15 V;
I
D
=
2.8 A; T
amb
= 25
°
C
V
GS
=
10 V; V
DD
=
15 V;
I
D
=
2.8 A; T
amb
= 25
°
C
V
GS
=
10 V; V
DD
=
15 V;
I
D
=
2.8 A; T
amb
= 25
°
C
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
V
V
nA
nA
pF
pF
pF
nC
C
iss
C
oss
C
rss
Q
g
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
gs
gate-source charge
2.5
nC
Q
gd
gate-drain charge
6
nC
t
d(on)
turn-on delay time
6
ns
t
r
rise time
6
ns
t
on
turn-on switching time
12
25
ns
t
d(off)
turn-off delay time
55
ns
t
f
fall time
40
ns
t
off
turn-off switching time
95
190
ns
Source-drain diode
V
SD
t
rr
source-drain diode forward voltage
reverse recovery time
V
GD
= 0; I
S
=
1.25 A
I
S
=
1.25 A; di/dt = 100 A/
μ
s
70
1.3
V
ns
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