參數(shù)資料
型號: BSO220N
英文描述: High Voltage Fast Recovery Rectifier Diodes
中文描述: ?小信號MOSFET。 20V的。 SO - 8封裝。導(dǎo)通狀態(tài)\u003d 0.13Ohm。 3.2A。當(dāng)?shù)毓蛦T。雙?
文件頁數(shù): 4/8頁
文件大?。?/td> 366K
代理商: BSO220N
BSO 220N
Data Sheet
4
05.99
Electrical Characteristics,
at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
at
T
j = 25 C, unless otherwise specified
Dynamic Characteristics
Gate charge at threshold
V
DD
= 15 V,
I
D
0,1 A,
V
GS
= 0 to 1 V
Gate charge at
V
gs
=5V
V
DD
= 15 V,
I
D
= 2.6 A,
V
GS
= 0 to 5 V
Gate charge total
V
DD
= 15 V,
I
D
= 2.6 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 15 V,
I
D
= 2.6 A
min.
max.
Q
G(th)
-
0.6
0.9
nC
Q
g(5)
-
9.2
13.8
Q
g
-
14.5
22
nC
V
(plateau)
-
3.13
-
V
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 C
Inverse diode direct current,pulsed
T
A
= 25 C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 5.2 A
Reverse recovery time
V
R
= 15 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
V
R
= 15 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/μs
I
S
-
-
3.2
A
I
SM
-
-
12.8
V
SD
-
0.95
1.4
V
t
rr
-
37
55
ns
Q
rr
-
19
30
μC
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