參數(shù)資料
型號: BSO220N
英文描述: High Voltage Fast Recovery Rectifier Diodes
中文描述: ?小信號MOSFET。 20V的。 SO - 8封裝。導通狀態(tài)\u003d 0.13Ohm。 3.2A。當?shù)毓蛦T。雙?
文件頁數(shù): 2/8頁
文件大小: 366K
代理商: BSO220N
BSO 220N
Data Sheet
2
05.99
Thermal Characteristics
Parameter
Symbol
Unit
Values
typ.
min.
max.
Characteristics
Thermal resistance, junction - soldering point
Thermal resistance @ 10 sec., min. footprint
Thermal resistance @ 10 sec.,
6 cm
2
cooling area
1)
45
100
62.5
K/W
R
thJS
R
th(JA)
R
th(JA)
-
-
-
-
-
-
Electrical Characteristics,
at
T
j = 25 C, unless otherwise specified
Parameter
Values
typ.
Symbol
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 10 μA
Zero gate voltage drain current
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 150 C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 2.6 A
V
GS
= 10 V,
I
D
= 3.2 A
V
(BR)DSS
20
-
-
V
V
GS(th)
1.2
1.6
2
I
DSS
-
-
0.1
-
1
100
μA
I
GSS
-
10
100
nA
R
DS(on)
-
-
0.13
0.08
0.2
0.13
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
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