參數(shù)資料
型號: BSF030NE2LQ
廠商: INFINEON TECHNOLOGIES AG
元件分類: JFETs
英文描述: 24 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, METAL, WDSON-2
文件頁數(shù): 7/13頁
文件大?。?/td> 1563K
代理商: BSF030NE2LQ
OptiMOS Power-MOSFET
BSF030NE2LQ
Final Data Sheet
2
2.2, 2011-04-07
2
Maximum ratings
at
T
j = 25 °C, unless otherwise specified.
3
Thermal characteristics
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Continuous drain current
I
D
--
75
A
V
GS=10 V, TC=25 °C
--
47
V
GS=10 V, TC=100 °C
--
24
V
GS=10 V, TA=25 °C,
R
thJA=45 K/W
1))
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 m thick) copper area for drain connection.
PCB is vertical in still air.
Pulsed drain current
2)
See figure 3 for more detailed information
I
D,pulse
--
300
T
C=25 °C
Avalanche current, single pulse
3)
3) See figure 13 for more detailed information
I
AS
--
40
Avalanche energy, single pulse
E
AS
--
50
mJ
I
D=35 A,RGS=25 Ω
Gate source voltage
V
GS
-20
-
20
V
Power dissipation
P
tot
--
28
W
T
C=25 °C
--
2.2
T
A=25 °C, RthJA=58 K/W
Operating and storage temperature
T
j,Tstg
-40
-
150
°C
IEC climatic category; DIN IEC 68-1
-
Table 3
Thermal characteristics
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Thermal resistance, junction - case
R
thJC
-
1.0
-
K/W
bottom
--
4.5
top
Device on PCB
R
thJA
--
58
6 cm
2 cooling area1)
1) See figure 13 for more detailed information
相關(guān)PDF資料
PDF描述
BSZ086P03NS3EG 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET
BT485AKHJ170 640 X 480 PIXELS PALETTE-DAC DSPL CTLR, PQCC84
BT485AKPJ135 640 X 480 PIXELS PALETTE-DAC DSPL CTLR, PQCC84
BT68561AKPJ 1 CHANNEL(S), 4M bps, MULTI PROTOCOL CONTROLLER, PQCC68
BT68560AKPJ 1 CHANNEL(S), 4M bps, MULTI PROTOCOL CONTROLLER, PQCC44
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSF030NE2LQXT 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 24A WDSON-2
BSF030NE2LQXUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 24A 6-Pin WDSON 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Cut TR (SOS) 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 24A WDSON-2
BSF035NE2LQXUMA1 功能描述:MOSFET N-CH 25V 22A 2WDSON 制造商:infineon technologies 系列:OptiMOS?? 包裝:帶卷(TR) 零件狀態(tài):有效 FET 類型:MOSFET N 通道,金屬氧化物 FET 功能:標準 漏源極電壓(Vdss):25V 電流 - 連續(xù)漏極(Id)(25°C 時):22A(Ta),69A(Tc) 不同?Id,Vgs 時的?Rds On(最大值):3.5 毫歐 @ 30A, 10V 不同 Id 時的 Vgs(th)(最大值):2V @ 250μA 不同 Vgs 時的柵極電荷(Qg):25nC @ 10V 不同 Vds 時的輸入電容(Ciss):1862pF @ 12V 功率 - 最大值:2.2W 工作溫度:-40°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:3-WDSON 供應商器件封裝:MG-WDSON-2,CanPAK M? 標準包裝:5,000
BSF045N03LQ3 G 功能描述:MOSFET OptiMOS 3 PWR-MOSFET N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSF045N03LQ3GXUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 18A 6-Pin WDSON T/R 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel