參數(shù)資料
型號: BSZ086P03NS3EG
廠商: INFINEON TECHNOLOGIES AG
元件分類: JFETs
英文描述: 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, PLASTIC, TSDSON-8
文件頁數(shù): 1/9頁
文件大?。?/td> 301K
代理商: BSZ086P03NS3EG
BSZ086P03NS3E G
OptiMOSTM P3 Power-Transistor
Features
single P-Channel in S3O8
Qualified according JEDEC
1) for target applications
150 °C operating temperature
V GS=25 V, specially suited for notebook applications
Pb-free; RoHS compliant
ESD protected
applications: battery management, load switching
Halogen-free according to IEC61249-2-21
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I D
T C=25 °C
A
T C=70 °C
T A=25 °C
2)
Pulsed drain current
I D,pulse
T C=25 °C
3)
Avalanche energy, single pulse
E AS
I D=-20 A, R GS=25
mJ
Gate source voltage
V GS
V
Power dissipation
P tot
T A=25 °C
W
T A=25 °C
2)
Operating and storage temperature
T j, T stg
°C
ESD class
JESD22-A114 HBM
Soldering temperature
°C
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
-13.5
69
260
Value
105
-160
-40
3 (>= 4 kV)
55/150/56
-55 … 150
±25
2.1
PG-TSDSON-8
086P3N
PG-TSDSON-8
V DS
-30
V
R DS(on),max
8.6
m
I D
-40
A
Product Summary
BSZ086P03NS3E G
Package
Type
Marking
Lead free
Packing
Yes
non-dry
Halogen free
Yes
Rev. 2.02
page 1
2009-11-16
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