參數(shù)資料
型號(hào): BSZ086P03NS3EG
廠商: INFINEON TECHNOLOGIES AG
元件分類: JFETs
英文描述: 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, PLASTIC, TSDSON-8
文件頁數(shù): 6/9頁
文件大?。?/td> 301K
代理商: BSZ086P03NS3EG
BSZ086P03NS3E G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-20 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-105 A
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
typ.
98 %
4
6
8
10
12
-60
-20
20
60
100
140
180
T j [°C]
R
DS
(on)
[m
]
Ciss
Coss
Crss
10
4
10
3
10
2
10
1
0
5
10
15
20
25
30
-V DS [V]
C
[
pF]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
-60
-20
20
60
100
140
180
T j [°C]
-V
G
S
(th)
[V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.1
1
10
100
0
0.5
1
1.5
-V SD [V]
I F
[A]
Rev. 2.02
page 6
2009-11-16
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