參數(shù)資料
型號(hào): BSZ086P03NS3EG
廠商: INFINEON TECHNOLOGIES AG
元件分類(lèi): JFETs
英文描述: 13.5 A, 30 V, 0.0134 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: GREEN, PLASTIC, TSDSON-8
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 301K
代理商: BSZ086P03NS3EG
BSZ086P03NS3E G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
-4.0 V
-4.5 V
-5.0 V
- 6 V
-10 V
0
5
10
15
20
25
30
35
40
0
10
203040
-I D [A]
R
DS
(on)
[m
]
25 °C
150 °C
0
10
20
30
40
50
60
0123
456
-V GS [V]
-I
D
[A]
0
20
40
60
010
20
30
-I D [A]
g
fs
[S]
-3.5 V
-3.7 V
-4.0 V
-4.2V
-4.5 V
-5.0 V
-10 V
0
10
20
30
40
01
23
-V DS [V]
-I
D
[A]
Rev. 2.02
page 5
2009-11-16
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