- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369473 > BLW78 (NXP SEMICONDUCTORS) HF/VHF power transistor PDF資料下載
參數(shù)資料
| 型號： | BLW78 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 83K |
| 代理商： | BLW78 |
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
Note
1.
ATC means American Technical Ceramics.
f (MHz)
V
CE
(V)
28
P
L
(W)
100
P
D
(W)
≤
25
η
(%)
≥
70
z
i
(
)
Z
L
(
)
4,30
+
j0,60
150
0,74
+
j1,35
C1 = C2 = C7 = C8 = 5 to 100 pF film dielectric trimmer
C3 = 203 pF; 2
×
82 pF and 39 pF multilayer ceramic chip capacitors (500 V, ATC
(1)
) in parallel
C4 = 39 pF multilayer ceramic chip capacitor (500 V, ATC
(1)
)
C5 = 1 nF feed-through capacitor
C6 = 100 nF polyester capacitor
L1 = strip (30 mm
×
8 mm); bent to form inverted ‘U’ shape with top 15 mm above heatsink, and bottom 5 mm above
heatsink
L2 = 1
μ
H r.f. choke
L3 = strip; shape as shown in Fig.8; 5 mm above heatsink
L4 = strip (40 mm
×
8 mm); bent in form
, 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink
L5 = strip (75 mm long; width 8 mm); 5 mm above base
L1, L3, L4, and L5 are copper strips with a thickness of 0,6 mm.
Heatsink: aluminium; 0,9 K/W
At P
L
= 100 W and V
CE
= 28 V, the output power at heatsink temperatures between 25
°
C and 90
°
C relative to that at
25
°
C is diminished by typ. 0,12 W/K.
Component layout on an aluminium heatsink for 150 MHz test circuit is shown in Fig.8.
Fig.7 Test circuit; c.w. class-B; f = 150 MHz.
handbook, full pagewidth
MGP548
50
50
C2
L2
C1
C7
C8
L3
L5
+
VCC
L1
T.U.T.
C3
C4
C5
C6
L4
相關PDF資料 |
PDF描述 |
|---|---|
| BLW80 | UHF power transistor |
| BLX41X | PNP |
| BLX41XX | PNP |
| BLX48R | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-205AD |
| BM-3BK | CASE DESKTOP |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLW80 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW81 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。