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參數(shù)資料
| 型號： | BLW78 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 83K |
| 代理商： | BLW78 |
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB or B operated mobile, industrial
and military transmitters in the h.f.
and v.h.f. bands. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions.
It has a
1
2
" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
MODE OF OPERATION
V
CE
V
I
C
I
C(ZS)
A
f
MHz
P
L
W
G
p
dB
η
%
d
3
(1)
dB
typ.
40
typ.
30
c.w. (class-B)
s.s.b. (class-A)
s.s.b. (class-AB)
28
26
28
150
28
28
100
35 (P.E.P.)
100 (P.E.P.)
>
typ. 19,5
typ. 19,0
6
>
70
3
0,05
typ. 42
PIN CONFIGURATION
Fig.1 Simplified outline. SOT121B.
handbook, halfpage
MLA876
4
3
2
1
PINNING - SOT121B.
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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