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參數(shù)資料
| 型號： | BLW78 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BLW78 |
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW78
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
CE
= 28 V; T
h
= 25
°
C; f
1
= 28,000 MHz; f
2
= 28,001 MHz
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
List of components:
OUTPUT POWER
W
G
p
dB
η
dt
%
I
C
A
d
3
(1)
dB
typ.
30
d
5
(1)
dB
typ.
37
I
C(ZS)
mA
100 (P.E.P.)
typ. 19
typ. 42
typ. 4,3
50
C1 = C11 = 150 pF air dielectric trimmer (single insulated rotor type)
C2 = 27 pF ceramic capacitor (500 V)
C3 = C12 = 150 pF air dielectric trimmer (single non-insulated rotor type)
C4 = 180 pF ceramic capacitor (500 V)
C5 = C8 = 3,9 nF ceramic capacitor
C6 = 150
μ
F/6 V solid tantalum capacitor
C7 = 150 pF ceramic capacitor (500 V)
C9 = 100 nF polyester capacitor
C10 = 750 pF mica dielectric trimmer (single insulated rotor type)
C13 = 750 pF mica dielectric trimmer (single non-insulated rotor type)
L1 = 3 turns enamelled Cu wire (1,0 mm); int. dia. 12 mm; length 12 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 3 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 12 mm
L4 = 2 turns enamelled Cu wire (2,0 mm); int. dia. 12 mm; length 8 mm
R1 = 27
(
±
10%) carbon resistor (0,5 W)
R2 = 4,7
(
±
10%) carbon resistor (0,5 W)
Fig.17 Test circuit; s.s.b. class-AB; f = 28 MHz.
handbook, full pagewidth
50
MGP558
50
C9
R2
C6
C5
C8
L2
L1
R1
L3
T.U.T.
L4
C11
C13
C12
temperature
compensated bias
(Ri
<
0.1
)
C10
C2
C1
C4
C7
C3
+
VCC
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