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參數(shù)資料
| 型號： | BLF247B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 75K |
| 代理商： | BLF247B |
August 1994
6
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
APPLICATION INFORMATION
RF performance in a push-pull, common source, class-B test circuit: T
h
= 25
°
C; R
th mb-h
= 0.15 K/W.
Ruggedness in class-B operation
The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: V
DS
= 28 V; f = 175 MHz; T
h
= 25
°
C; P
L
= 150 W; R
th mb-h
= 0.15 K/W.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(mA)
2
×
100
P
L
(W)
G
p
(dB)
≥
12
typ. 13.5
η
D
(%)
≥
55
typ. 70
CW, class-B
225
28
150
Fig.9
Power gain and efficiency as functions of
load power; typical values.
Class-B operation.
V
DS
= 28 V.
I
DQ
= 2
×
100 mA.
Z
L
= 1.3 + j0.6
per section.
f = 225 MHz.
handbook, halfpage
(dB)
0
50
100
150
200
250
0
4
8
12
16
0
20
40
60
80
100
PL
η
(%)
η
MBD289
Gp
Class-B operation.
V
DS
= 28 V.
I
DQ
= 2
×
100 mA.
Z
L
= 1.3 + j0.6
per section.
f = 225 MHz.
Fig.10 Load power as a function of input power;
typical values.
handbook, halfpage
0
200
100
0
10
20
30
MBD290
PL
(W)
Pi
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