參數(shù)資料
型號(hào): BLF247B
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
中文描述: 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù): 3/16頁(yè)
文件大?。?/td> 75K
代理商: BLF247B
August 1994
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
V
DS
V
GS
I
D
P
tot
drain-source voltage (DC)
gate-source voltage
drain current (DC)
total power dissipation
65
±
20
13
280
V
V
A
W
up to T
mb
= 25
°
C; total device;
both sections equally loaded
T
stg
T
j
storage temperature
operating junction temperature
65
+150
+200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting base
to heatsink
total device; both sections equally
loaded
total device; both sections equally
loaded
0.63
K/W
R
th mb-h
0.15
K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 25
°
C.
10
2
MBD287
10
1
1
10
2
10
ID
(A)
VDS
(1)
(2)
Fig.3 Power derating curves.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
0
40
400
300
100
0
200
MBD288
80
120
160
Th
Ptot
(W)
o
(2)
(1)
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