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參數(shù)資料
| 型號： | BLF1049 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Base station LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 110K |
| 代理商： | BLF1049 |
2003 May 14
5
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
handbook, halfpage
d3
(dBc)
0
50
100
150
30
50
60
40
MLE065
(3)
(2)
(1)
PL (PEP) (W)
Fig.6
Third order intermodulation distortion as a
function of load power at different
temperatures.
(1) T
h
=
40
°
C.
(2) T
h
= 20
°
C.
(3) T
h
= 80
°
C.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
handbook, halfpage
d5
(dBc)
0
50
100
150
40
60
70
50
MLE066
(1)
(3)
(2)
PL (PEP) (W)
Fig.7
Fifth order intermodulation distortion as a
function of load power at different
temperatures.
(1) T
h
=
40
°
C.
(2) T
h
= 20
°
C.
(3) T
h
= 80
°
C.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
handbook, halfpage
0
50
60
70
50
100
150
MLE067
(1)
(2)
(3)
PL (PEP) (W)
d7
(dBc)
Fig.8
Seventh order intermodulation distortion as
a function of load power at different
temperatures.
(1) T
h
=
40
°
C.
(2) T
h
= 20
°
C.
(3) T
h
= 80
°
C.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz;
handbook, halfpage
gain
(dB)
0
50
100
150
15
5
0
10
40
η
D
(%)
30
10
0
20
MLE068
PL (PEP) (W)
(2)
(3)
(4)
(1)
Fig.9
Powergainanddrainefficiencyasfunctions
of peak envelope load power;
typical values.
V
DS
= 27 V; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
(1) I
DQ
= 1 A.
(2) I
DQ
= 1.45 A.
(3) I
DQ
= 1 A.
(4) I
DQ
= 1.45 A.
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