參數(shù)資料
型號： BLF1049
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Base station LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-3
文件頁數(shù)： 3/12頁
文件大?。?/td> 110K
代理商： BLF1049
2003 May 14
3
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
THERMAL CHARACTERISTICS
Notes
1.
2.
Thermal resistance is determined under RF operating conditions.
Depending on mounting condition in application.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit; V
DS
= 27 V; T
h
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-c
R
th j-h
thermal resistance from junction to case
thermal resistance from junction to heatsink
T
h
= 25
°
C, P
L
= 35 W (AV), note 1
T
h
= 25
°
C, P
L
= 35 W (AV), note 2
0.42
0.62
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
9
60
MAX.
5
3
1
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
V
GS
= 0; I
D
= 3 mA
V
DS
= 10 V; I
D
= 300 mA
V
GS
= 0; V
DS
= 36 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
20 V; V
DS
= 0
V
DS
= 10 V; I
D
= 10 A
V
GS
= 9 V; I
D
= 10 A
75
4
45
V
V
μ
A
A
μ
A
S
m
Mode of operation: 2-tone CW, 100 kHz spacing; I
DQ
= 1130 mA; f = 890 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
6
25
UNIT
G
p
η
D
IRL
d
3
gain power
drain efficiency
input return loss
third order inter modulation
distortion
P
L
= 125 W (PEP)
14.6
33
15.5
37
12
32
dB
%
dB
dBc
Mode of operation: GSM EDGE; I
DQ
= 750 mA; f = 920 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
η
D
ACPR 400
EVM (AV)
EVM peak
gain power
drain efficiency
adjacent channel power ratio
EVM rms average signal distortion
EVM rms peak signal distortion
P
L
= 45 W (AV)
15
32
64
2
2.2
dB
%
dBc
%
%
Mode of operation: 1-tone CW; I
DQ
= 1000 mA; f = 920 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
η
D
gain power
drain efficiency
P
L
= P
L 1 dB
= 125 W
16.5
54
dB
%
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