參數(shù)資料
型號： BLF1049
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Base station LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-3
文件頁數(shù)： 4/12頁
文件大?。?/td> 110K
代理商： BLF1049
2003 May 14
4
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
handbook, halfpage
Gp
(dB)
0
10
50
15
13
12
14
20
30
40
PL (AV)(W)
MLE061
η
D
(%)
η
D
Gp
40
30
10
0
20
Fig.2
GSM EDGE power gain and efficiency as
functions of load power; typical values.
V
DS
= 27 V; f = 920 MHz; I
DQ
= 750 mA; T
h
≤
25
°
C.
handbook, halfpage
400
(dBc)
0
10
PL (AV)(W)
50
64
68
70
66
20
30
40
MLE062
EVMrms
(AV)
(%)
1.5
2
0.5
0
1
EVM
ACPR400
Fig.3
GSM EDGE ACPR400 and EVM as
functions of average load power; typical
values.
V
DS
= 27 V; f = 920 MHz; I
DQ
= 750 mA; T
h
≤
25
°
C.
handbook, halfpage
0
50
100
150
MLE063
PL (AV) (W)
17
16
15
Gp
(dB)
η
D
(%)
Gp
η
D
60
20
40
0
Fig.4
1-tone CW power gain and efficiency as
functions of load power; typical values.
V
DS
= 27 V; f = 920 MHz; I
DQ
= 1000 mA;
handbook, halfpage
(%)
0
50
100
150
0
40
30
20
10
17
14
16.5
16
15.5
14.5
15
MLE064
gain
(dB)
PL (PEP) (W)
(4)
η
(1,2,3)
(5)
(6)
Fig.5
2-tone power gain and efficiency as
functions of load power at different
temperatures.
V
DS
= 27 V; I
DQ
= 1.1 A; f
1
= 920.0 MHz; f
2
= 920.1 MHz.
(1)
η
at T
h
=
40
°
C.
(2)
η
at T
h
= 20
°
C.
(3)
η
at T
h
= 80
°
C.
(4) gain at T
h
=
40
°
C.
(5) gain at T
h
= 20
°
C.
(6) gain at T
h
= 80
°
C.
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