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參數(shù)資料
| 型號： | BF1102R |
| 英文描述： | Dual N-channel dual gate MOS-FETs |
| 中文描述： | 雙N溝道雙柵MOS - FET的 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 120K |
| 代理商： | BF1102R |
2000 Apr 11
2
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FETs
BF1102; BF1102R
FEATURES
Two low noise gain controlled amplifiers in a single
package
Specially designed for 5 V applications
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
PINNING - SOT363
PIN
DESCRIPTION
BF1102
BF1102R
1
2
3
4
5
6
gate 1 (1)
gate 2 (1 and 2)
drain (1)
drain (2)
source (1 and 2)
gate 1 (2)
gate 1 (1)
source (1 and 2)
drain (1)
drain (2)
gate 2 (1 and 2)
gate 1 (2)
handbook, halfpage
MBL029
AMP1
d (1)
g1 (1)
d (2)
g1 (2)
AMP2
g2 (1, 2)
s (1, 2)
1
3
2
4
5
6
Fig.1 Simplified outline and symbol.
BF1102 marking code:
W1.
BF1102R marking code:
W2-.
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the source lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specified
V
DS
I
D
P
tot
y
fs
C
ig1-s
C
rss
F
X
mod
T
j
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
36
43
2.8
30
2
7
40
200
3.6
50
2.8
150
V
mA
mW
mS
pF
fF
dB
dB
μ
V
°
C
T
s
≤
102
°
C; note 1
I
D
= 15 mA
I
D
= 15 mA
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF1102R T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1102R,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1102R,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 40mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1105 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1105,215 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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